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| Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. Fast switching speed. Wide ASO. APPLICATIONS Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC4460 Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collectorl power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 15 25 4 55 3 150 -55~150 ae ae UNIT V V V A A A W W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4460 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter sustain voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA; IE=0 IC=5mA; RBE= IE=1mA; IC=0 IC=5A;IB1=2A; IB2=-2A;L=500|I IC=6A;IB=1.2 A IC=6A;IB=1.2A VCB=500V IE=0 VEB=5V; IC=0 IC=1.2A ; VCE=5V IC=6A ; VCE=5V IC=1.6A ; VCE=10V VCB=10V;f=1MHz 15 8 20 160 MHz pF H MIN 800 500 7 500 1.0 1.5 10 10 50 |I |I TYP. MAX UNIT V V V V V V A A SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEX(sus) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Switching times ton tstg tf Turn-on time Storage time Fall time IC=5IB1=-2.5IB2=7A; RL=28.6| VCC=200V 0.5 3.0 0.3 |I |I |I s s s hFE-1 classifications L 15-30 M 20-40 N 30-50 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4460 Fig.2 Outline dimensions JMnic |
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